13. H. B. Ribeiro, S. L. L. M. Ramos, L. Seixas, C. J. S. de Matos, M. A. Pimenta, Edge phonons in layered orthorhombic GeS and GeSe monochalcogenides. Phys. Rev B 100, 094301 (2019).

12. L. D. Germano, V. S. Marangoni, N. V. V. Mogili, L. Seixas, C. M. Maroneze, Ultrasmall (<2 nm) Au@Pt Nanostructures: Tuning the Surface Electronic States for Electrocatalysis. ACS Appl. Mater. Interfaces 115661 (2019).

11. A. P. Godoy, P. Ecorchard, H. Beneš, J. Tolasz, D. Smrzová, L. Seixas et al., Ultrasound exfoliation of graphite in biphasic liquid systems containing ionic liquids: a study on the conditions for obtaining large few-layers graphene. Ultrason. Sonochem. 55, 279-288 (2019).


10. M. Perchacz, R. K. Donato, L. Seixas et al., Ionic Liquid-Silica Precursors via Solvent-Free Sol–Gel Process and Their Application in Epoxy-Amine Network: A Theoretical/Experimental Study. ACS Appl. Mater. Interfaces. 9, 16474 (2017).


9. L. Seixas, A. S. Rodin, A. Carvalho, A. H. Castro Neto, Multiferroic Two-Dimensional Materials. Phys. Rev. Lett. 116, 206803 (2016).

8. S. P. Koenig, R. Doganov, L. Seixas et al., Electron doping of ultra-thin black phosphorus with Cu adatoms. Nano Lett. 16, 2145 (2016).


7. L. Seixas, D. West, A. Fazzio, S. B. Zhang, Vertical twinning of the Dirac cone at the interface between topological insulators and semiconductors. Nat. Commun. 6, 7630 (2015).

6. L. Seixas, A. Carvalho, A. H. Castro Neto, Atomically thin dilute magnetism in Co-doped phosphorene. Phys. Rev. B 91, 155138 (2015).

5. L. Seixas, A. S. Rodin, A. Carvalho, A. H. Castro Neto, Exciton binding energies and luminescence of phosphorene under pressure. Phys. Rev. B 91, 115437 (2015).


4. L. Seixas, J. E. Padilha, A. Fazzio, Quantum spin Hall effect on germanene nanoroad embedded in completely hydrogenated germanene. Phys. Rev. B 89, 195403 (2014).


3. J. E. Padilha, L. Seixas, R. B. Pontes, A. J. R. da Silva, A. Fazzio, Quantum spin Hall effect in a disordered hexagonal Si x Ge 1-x alloy. Phys. Rev. B 88, 201106(R) (2013).

2. L. B. Abdalla, L. Seixas, T. M. Schmidt, R. H. Miwa, A. Fazzio, Topological insulator Bi2Se3(111) surface doped with transition metals: An ab initio investigation. Phys. Rev. B 88, 045312 (2013).

1. L. Seixas, L. B. Abdalla, T. M. Schmidt, A. Fazzio, R. H. Miwa, Topological states ruled by stacking faults in Bi2Se3 and Bi2Te3. J. Appl. Phys. 113, 023705 (2013).

Highlights in media

Pesquisa FAPESP magazine (In portuguese)

Brazilian Physical Society bulletin (In portuguese)